NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Two stage dual gate MESFET monolithic gain control amplifier for Ka-bandA monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
Document ID
19880042594
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Sokolov, V. (Honeywell, Inc. Bloomington, MN, United States)
Geddes, J. (Honeywell, Inc. Bloomington, MN, United States)
Contolatis, A. (Honeywell Physical Sciences Center Bloomington, MN, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Electronics And Electrical Engineering
Accession Number
88A29821
Funding Number(s)
CONTRACT_GRANT: NAS3-23356
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available