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A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafersA chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers is described. This method consists of a wet chemical treatment (surface cleaning, oxidation in solution, and measurement in HF solution) to passivate the silicon surfaces, a laser diode array for carrier excitation, and a microwave bridge measuring system which is more sensitive than the microwave systems used previously for lifetime measurement. Representative experimental data are presented to demonstrate this technique. The result reveals that this method is useful for the determination of bulk lifetime of commercial silicon wafers.
Document ID
19880046508
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Luke, Keung L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cheng, Li-Jen
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
April 1, 1988
Publication Information
Publication: Electrochemical Society, Journal
Volume: 135
ISSN: 0013-4651
Subject Category
Solid-State Physics
Accession Number
88A33735
Distribution Limits
Public
Copyright
Other

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