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InP based solar cells for space application: Reduction of external lossesAlthough InP-based solar cells have considerable potential for space applications, it is necessary to improve efficiencies to around the level of GaAs or Si cells before their excellent radiation resistance can be regarded as a dominant advantage. The authors concentrate on indium-tin-oxide/InP cells, presenting data relating to reduction of the contact resistance of the rear surface metallization, reduction of reflectance losses by choosing indium-tin-oxide deposition conditions to give specific optical properties, and reduction of losses associated with the grid. Simultaneous optimization of all of these has led to improved values of Jsc. For devices of approximately 1 cm2 in area, the largest Jsc achieved to date is 28.1 mA/aq cm (AM1.5, SERI/NASA direct normal spectrum, 25 C, total area, 100 mW/sq cm). For this particular cell, the equivalent AM0 value of Jsc was 34.6 mA/sq cm, which appears to be the largest reported for any InP-based cell.
Document ID
19880047023
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Wu, X.
Coutts, T. J.
Dhere, R. G.
Gessert, T. A.
Dhere, N. G.
(Solar Energy Research Institute Golden, CO, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: New Orleans, LA
Country: United States
Start Date: May 4, 1987
End Date: May 8, 1987
Accession Number
88A34250
Funding Number(s)
CONTRACT_GRANT: NASA ORDER C-300020-J
CONTRACT_GRANT: DE-AC02-83CH-10093
Distribution Limits
Public
Copyright
Other

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