A V-grooved AlGaAs/GaAs passivated pn junctionA passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.
Document ID
19880047073
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bailey, S. G. (NASA Lewis Research Center Cleveland, OH, United States)
Leon, R. P. (NASA Lewis Research Center Cleveland, OH, United States)
Arrison, A. (NASA Lewis Research Center Cleveland, OH, United States)