Radiation characteristics of low resistivity float zone silicon solar cellsThe effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.
Document ID
19880047126
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Crotty, G. T. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kachare, R. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Anspaugh, B. E. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)