Radiation performance of AlGaAs and InGaAs concentrator cells and expected performance of cascade structuresAluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.
Document ID
19880047129
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Curtis, H. B. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr. (NASA Lewis Research Center Cleveland, OH, United States)