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CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSeResults on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.
Document ID
19880047214
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Nouhi, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Stirn, R. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hermann, A.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: New Orleans, LA
Country: United States
Start Date: May 4, 1987
End Date: May 8, 1987
Accession Number
88A34441
Distribution Limits
Public
Copyright
Other

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