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Issues in the growth of bulk crystals of infrared materialsAttention is given to the relevant criteria governing materials choice in the growth of IR optoelectronic bulk single crystals of III-V and II-VI alloy and I-III-VI2 compound types. The most important considerations concern the control of crystal purity, microstructural perfection, stoichiometry, and uniformity during crystal growth, as well as the control of surface properties in wafer fabrication. Specific examples are given to illustrate the problems encountered and their preferred solutions.
Document ID
19880048481
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bachmann, K. J.
(North Carolina State Univ. Raleigh, NC, United States)
Golowsky, H.
(North Carolina State University Raleigh, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Solid-State Physics
Meeting Information
Meeting: Materials for infrared detectors and sources
Location: Boston, MA
Country: United States
Start Date: December 1, 1986
End Date: December 5, 1986
Accession Number
88A35708
Funding Number(s)
CONTRACT_GRANT: NSF DMR-84-14580
CONTRACT_GRANT: NAG1-354
Distribution Limits
Public
Copyright
Other

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