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Silicon carbide - Progress in crystal growthRecent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.
Document ID
19880053565
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Powell, J. Anthony
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Nonmetallic Materials
Accession Number
88A40792
Distribution Limits
Public
Copyright
Other

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