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Diagnostics of silane and germane radio frequency plasmas by coherent anti-Stokes Raman spectroscopyIn situ plasma diagnostics using coherent anti-Stokes Raman spectroscopy have shown different dissociation characteristics for GeH4 and SiH4 in radio frequency (rf) plasma-enhanced chemical vapor deposition of amorphous silicon germanium alloy (a-SiGe:H) thin films. The GeH4 dissociation rate in rf plasmas is a factor of about 3 larger than that of SiH4. Plasma diagnostics have revealed that the hydrogen dilution of the SiH4 and GeH4 mixed plasma plays a critical role in suppressing the gas phase polymerization and enhancing the GeH4 dissociation.
Document ID
19880054702
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Perry, Joseph W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Shing, Y. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Allevato, C. E.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
June 13, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 52
ISSN: 0003-6951
Subject Category
Plasma Physics
Accession Number
88A41929
Distribution Limits
Public
Copyright
Other

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