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Simulation of proton-induced energy deposition in integrated circuitsA time-efficient simulation technique was developed for modeling the energy deposition by incident protons in modern integrated circuits. To avoid the excessive computer time required by many proton-effects simulators, a stochastic method was chosen to model the various physical effects responsible for energy deposition by incident protons. Using probability density functions to describe the nuclear reactions responsible for most proton-induced memory upsets, the simulator determines the probability of a proton hit depositing the energy necessary for circuit destabilization. This factor is combined with various circuit parameters to determine the expected error-rate in a given proton environment. An analysis of transient or dose-rate effects is also performed. A comparison to experimental energy-disposition data proves the simulator to be quite accurate for predicting the expected number of events in certain integrated circuits.
Document ID
19880055016
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fernald, Kenneth W.
(NASA Langley Research Center Hampton, VA; North Carolina State University, Raleigh, United States)
Kerns, Sherra E.
(North Carolina State University Raleigh, United States)
Date Acquired
August 13, 2013
Publication Date
February 1, 1988
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 35
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
88A42243
Distribution Limits
Public
Copyright
Other

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