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Intersubband absorption of silicon-based quantum wells for infrared imagingThe 10-micron intersubband absorption in quantum wells made of the silicon-based system, Si/Si(1-x)Ge(x), has been calculated. The necessary details of the effective-mass anisotropy are included in the present analysis. It is found that it is readily possible to achieve an absorption constant of order of 10,000/cm in Si quantum wells with current doping technology. For 110-line and 111-line growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.
Document ID
19880060375
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Yang, Chan-Ion
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Pan, Dee-Son
(California, University Los Angeles, United States)
Date Acquired
August 13, 2013
Publication Date
August 1, 1988
Publication Information
Publication: Journal of Applied Physics
Volume: 64
ISSN: 0021-8979
Subject Category
Electronics And Electrical Engineering
Accession Number
88A47602
Distribution Limits
Public
Copyright
Other

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