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Growth of (111) GaAs on (111) Si using molecular-beam epitaxy(111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.
Document ID
19880060378
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.341796
Authors
Radhakrishnan, G. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Liu, J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, J. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Morkoc, H. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena; Illinois, University Urbana, United States)
Date Acquired
August 13, 2013
Publication Date
August 1, 1988
Publication Information
Publication: Journal of Applied Physics
Volume: 64
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
88A47605
Distribution Limits
Public
Copyright
Other

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