Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactorIn the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.
Document ID
19880061738
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Sheikholeslami, M. Z. (Creare, Inc. Hanover, NH, United States)
Jasinski, T. (Creare, Inc. Hanover, NH, United States)
Fretz, K. W. (Creare, Inc. Hanover, NH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Subject Category
Mechanical Engineering
Report/Patent Number
AIAA PAPER 88-3679
Meeting Information
Meeting: AIAA, ASME, SIAM, and APS, National Fluid Dynamics Congress