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Spread Of Charge From Ion Tracks In Integrated CircuitsSingle-event upsets (SEU's) propagate to adjacent cells in integrated memory circuits. Findings of experiments in lateral transport of electrical-charge carriers from ion tracks in 256K dynamic randon-access memories (DRAM's). As dimensions of integrated circuits decrease, vulnerability to SEU's increases. Understanding gained enables design of less vulnerable circuits.
Document ID
19890000010
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, John A.
(Caltech)
Schwartz, Harvey R.
(Caltech)
Watson, R. Kevin
(Caltech)
Nevill, Leland R.
(Micron Technology, Inc.)
Date Acquired
August 13, 2013
Publication Date
January 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17265
Accession Number
89B10010
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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