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Metal Film Increases CCD Quantum EfficiencyThin layer of platinum or other high-work-function metal applied to back side of rear-illuminated charge-coupled device (CCD) achieves quantum efficiency (QE)-pinned state, an ideal condition allowing sensor to achieve 100-percent internal charge-collection efficiency within its photosensitive volume. Metal layer, called flash gate, easily applied by tungsten vacuum deposition during last step of sensor fabrication.
Document ID
19890000155
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Janesick, James R.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
April 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-16815
Accession Number
89B10155
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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