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Growing Gallium Arsenide On SiliconEpitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.
Document ID
19890000231
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Radhakrishnan, Gouri
(Caltech)
Date Acquired
August 14, 2013
Publication Date
May 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 5
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-17360
Accession Number
89B10231
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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