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Laser-Assisted Growth Of AlGaAs FilmsFilms of aluminum gallium arsenide grown on gallium arsenide by laser-assisted organometallic chemical-vapor deposition. Films single-crystal and contain no detectable oxygen or carbon. Laser beam impinges on substrate in quartz reaction chamber surrounded by radio-frequency induction coils. Film grows much more rapidly at 500 degree C than 450 degree C. Slight amount of interfacial oxygen detectable in film deposited at lower temperature.
Document ID
19890000260
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Warner, Joseph D. (NASA Lewis Research Center, Cleveland, OH.)
Wilt, David M. (NASA Lewis Research Center, Cleveland, OH.)
Pouch, John J. (NASA Lewis Research Center, Cleveland, OH.)
Aron, Paul R. (NASA Lewis Research Center, Cleveland, OH.)
Date Acquired
August 14, 2013
Publication Date
May 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 5
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LEW-14638
Accession Number
89B10260
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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