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Asymmetrical SRAM Cells For Radiation TestsFeatures of circuits altered to increase or decrease sensitivity to radiation. State-space analysis used to analyze single-event-upset behavior of memory cell. When voltage on node a is set at one of indicated initial values Vao and then released, voltages on nodes a and b then follow indicated trajectory to final logic "one" or logic "zero" state. Ability to do this important for design of radiation-detecting integrated circuits (deliberately made more sensitive to ionizing radiation) and "radiation-hardened" integrated circuits - those intended to be relatively invulnerable to intense radiation.
Document ID
19890000272
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Buehler, Martin G.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 6
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-16890
Accession Number
89B10272
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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