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Radiation Damage In Advanced Bipolar TransistorsReport describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.
Document ID
19890000432
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, John A. (Caltech)
Goben, Charles A. (Southern Illinois Univ.)
Berndt, Dale F. (Honeywell, Inc.)
Date Acquired
August 14, 2013
Publication Date
September 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 9
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17570
Accession Number
89B10432
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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