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Making Submicron CoSi2 Structures On Silicon SubstratesExperimetnal fabrication process makes submicron-sized structures of single-crystal metallic CoSi2 on silicon substrates. Amorphous Co:Si(1:2) crystallized by electron beam becoming single-crystal CoSi2. Remaining amorphous Co:Si then preferentially etched away. When fully developed, process used to make fine wires or dots exhibiting quantum confinement of charge carriers.
Document ID
19890000482
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Nieh, Simon K. W.
(Caltech)
Lin, True-Lon
(Caltech)
Fathauer, Robert W.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
September 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 9
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-17736
Accession Number
89B10482
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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