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Pulsed Molecular Beams For Growth Of InAs On GaAsPauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.
Document ID
19890000582
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Grunthaner, Frank J.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
November 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 11
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-17723
Accession Number
89B10582
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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