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Memory Switches Based On MnO2-x Thin FilmsThin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.
Document ID
19890000591
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Ramesham, Rajeshuni (Caltech)
Thakoor, Anilkumar P. (Caltech)
Lambe, John (Caltech)
Date Acquired
August 14, 2013
Publication Date
December 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 12
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17377
Accession Number
89B10591
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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