Characterization of GaAlAs optical waveguide heterostructures grown by molecular beam epitaxyMultiple-layer GaAlAs optical waveguide heterostructures have been grown by MBE. These samples were designed to operate at 840 nm with negligible coupling of guided light to the absorbing GaAs substrate. The Al concentration was 13 percent for the guiding layer and was 16 percent for the cladding layers. The process for growing waveguide layers was calibrated primarily by high-energy electron diffraction, with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low-pressure magnetically confined multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, AES, and optical-waveguide loss measurements.
Document ID
19890022972
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Radens, C. J. (Cincinnati Univ. OH, United States)
Jackson, H. E. (Cincinnati Univ. OH, United States)
Boyd, J. T. (Cincinnati, University OH, United States)
Bhasin, K. B. (Cincinnati Univ. OH, United States)
Pouch, J. J. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Optoelectronic Materials, Devices, Packaging, and Interconnects