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Neural network based feed-forward high density associative memoryA novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.
Document ID
19890025241
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Daud, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Moopenn, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lamb, J. L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ramesham, R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Thakoor, A. P.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEDM - International Electron Devices Meeting
Location: Washington, DC
Country: United States
Start Date: December 6, 1987
End Date: December 9, 1987
Accession Number
89A12612
Distribution Limits
Public
Copyright
Other

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