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Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111)Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p(+) layer to 0.89 eV for a sample with a 20-nm-thick p(+) layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
Document ID
19890026573
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fathauer, R. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lin, T. L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, P. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Andersson, P. O.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Iannelli, J. M.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 14, 2013
Publication Date
October 15, 1988
Publication Information
Publication: Journal of Applied Physics
Volume: 64
ISSN: 0021-8979
Subject Category
Electronics And Electrical Engineering
Accession Number
89A13944
Distribution Limits
Public
Copyright
Other

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