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A proposal for epitaxial thin film growth in outer spaceA new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.
Document ID
19890029733
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ignatiev, Alex
(Houston Univ. TX, United States)
Chu, C. W.
(Houston, University TX, United States)
Date Acquired
August 14, 2013
Publication Date
November 1, 1988
Publication Information
Publication: Metallurgical Transactions A - Physical Metallurgy and Materials Science
Volume: 19A
ISSN: 0360-2133
Subject Category
Materials Processing
Accession Number
89A17104
Funding Number(s)
CONTRACT_GRANT: NAGW-977
Distribution Limits
Public
Copyright
Other

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