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Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar processExperimental measurements are reported of the degradation effects of high-energy particles (heavy Br ions and electrons) and Co-60 gamma-rays on the current gain of minimum-geometry bipolar transistors made from an advanced process. The data clearly illustrate the total-ionizing-dose vs particle-fluence behavior of this bipolar transistor produced by an advanced process. In particular, bulk damage from Co-60 gamma rays in bipolar transistors (base transport factor degradation) and surface damage in bipolar transistors from ionizing radiation (emitter-efficiency degradation) have been observed. The true equivalence between various types of radiation for this process technology has been determined on the basis of damage from the log K1 intercepts.
Document ID
19890038372
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Zoutendyk, John A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Goben, Charles A.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Berndt, Dale F.
(Honeywell System and Research Center Minneapolis, MN, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1988
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 35
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
89A25743
Distribution Limits
Public
Copyright
Other

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