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Investigation of single-event upset (SEU) in an advanced bipolar processAn extensive analytical and experimental study SEU in an advanced silicon bipolar process was made. The modeling used process and device parameters to model the SEU charge, collection, and circuit response derived from a special version of PISCES in cylindrical coordinates and SPICE, respectively. Data are reported for test cells of various sizes.
Document ID
19890038396
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1109/23.25500
Authors
Zoutendyk, John A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Secrest, Elaine C. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Berndt, Dale F. (Honeywell Systems and Research Center Minneapolis, MN, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1988
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 35
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
89A25767
Distribution Limits
Public
Copyright
Other

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