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Plasma deposited silicon nitride for indium phosphide encapsulationThe composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.
Document ID
19890040423
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Valco, G. J.
(Cincinnati Univ. OH, United States)
Kapoor, V. J.
(Cincinnati Univ. OH, United States)
Biedenbender, M. D.
(Cincinnati, University OH, United States)
Williams, W. D.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Publication Information
Publication: Electrochemical Society, Journal
Volume: 136
ISSN: 0013-4651
Subject Category
Solid-State Physics
Accession Number
89A27794
Distribution Limits
Public
Copyright
Other

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