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Optical evidence for the metallization of Xenon at 132(5) GPaXe has been compressed in a diamond-anvil cell to approximately 200 GPa. The metallization of Xe by band-gap closure was investigated by obtaining optical data in both the metallic and insulating states. In the metallic state, the pressure dependence of the plasma frequency was determined from absorption data fitted with a free-electron model. In the insulating state, the pressure dependence of the band gap was determined from absorption data fitted with an indirect-band-gap model. The optical data indicate that the insulator-to-metal transition in Xe occurs at 132(5) GPa.
Document ID
19890041784
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Goettel, Kenneth A.
(Harvard Univ. Cambridge, MA, United States)
Eggert, Jon H.
(Harvard Univ. Cambridge, MA, United States)
Silvera, Isaac F.
(Harvard University Cambridge, MA, United States)
Moss, William C.
(Lawrence Livermore National Laboratory Livermore, CA, United States)
Date Acquired
August 14, 2013
Publication Date
February 6, 1989
Publication Information
Publication: Physical Review Letters
Volume: 62
ISSN: 0031-9007
Subject Category
Solid-State Physics
Accession Number
89A29155
Funding Number(s)
CONTRACT_GRANT: NAGW-657
CONTRACT_GRANT: W-7405-ENG-48
Distribution Limits
Public
Copyright
Other

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