Stable, high quantum efficiency silicon photodiodes for vacuum-UV applicationsSilicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the SiSiO2 interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120 percent at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. The possibility of using these photodiodes as vacuum ultraviolet detector standards is being currently investigated.
Document ID
19890042120
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Korde, Raj (ILC Technology, Inc. United Detector Technology Div., Hawthorne, CA, United States)
Canfield, L. Randall (NIST Gaithersburg, MD, United States)
Wallis, Brad (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)