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Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopyA new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.
Document ID
19890044951
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Hecht, Michael H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bell, L. D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kaiser, W. J. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1988
Subject Category
Solid-State Physics
Meeting Information
Meeting: SiO2 and Its Interfaces
Location: Boston, MA
Country: United States
Start Date: November 20, 1987
End Date: December 4, 1987
Accession Number
89A32322
Distribution Limits
Public
Copyright
Other

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