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Effects of various consolidation techniques on microstructure, strength, and reliability of alpha-SiCThe effects of slurry pressing, HIP, and sinter-HIP on the strength, microstructure, and critical processing flaws in alpha-SiC are examined. Also, the feasibility of glass encapsulation is determined. Baseline strength was improved by about 25 percent by using slurry pressing instead of dry pressing. HIP further improved average strength to as high as 655 MPa. Sinter-HIP did not noticeably improve average strength. Although process-related flaws such as shrinkage cracks and large voids were not seen in HIPed alpha-SiC, surface-related flaws were observed. It is suggested that surface finishing by lapping, polishing, and heat treating might reduce the effect of surface-related flaws, improving the Weibull modulus in HIPed alpha-SiC.
Document ID
19890046240
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Dutta, Sunil
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Nonmetallic Materials
Meeting Information
Meeting: Silicon Carbide ''87
Location: Columbus, OH
Country: United States
Start Date: August 2, 1987
End Date: August 5, 1987
Sponsors: ACS
Accession Number
89A33611
Distribution Limits
Public
Copyright
Other

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