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Thermal expansion and elastic anisotropies of SiC as related to polytype structureThe concept of the fraction of hexagonal stacking is used to describe the anisotropic thermal expansion coefficients of polytypes of SiC. The single crystal elastic anisotropy for the SiC polytype structures and the temperature dependencies of the anisotropies are examined. The anisotropic thermoelastic stress index for the 3C and 6H SiC polytypes are illustrated graphically. It is shown that this index is useful for predicting the most desirable crystal growth orientations for SiC whisker incorporation into composite matrices.
Document ID
19890046247
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Li, Z.
(Washington Univ. Seattle, WA, United States)
Bradt, R. C.
(Washington, University Seattle, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Nonmetallic Materials
Meeting Information
Meeting: Silicon Carbide ''87
Location: Columbus, OH
Country: United States
Start Date: August 2, 1987
End Date: August 5, 1987
Sponsors: ACS
Accession Number
89A33618
Funding Number(s)
CONTRACT_GRANT: NAGW-199
Distribution Limits
Public
Copyright
Other

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