Thermal expansion and elastic anisotropies of SiC as related to polytype structureThe concept of the fraction of hexagonal stacking is used to describe the anisotropic thermal expansion coefficients of polytypes of SiC. The single crystal elastic anisotropy for the SiC polytype structures and the temperature dependencies of the anisotropies are examined. The anisotropic thermoelastic stress index for the 3C and 6H SiC polytypes are illustrated graphically. It is shown that this index is useful for predicting the most desirable crystal growth orientations for SiC whisker incorporation into composite matrices.
Document ID
19890046247
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Li, Z. (Washington Univ. Seattle, WA, United States)
Bradt, R. C. (Washington, University Seattle, United States)