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Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wellsA novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.
Document ID
19890047317
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kost, Alan
(University of Southern California Los Angeles, CA, United States)
Zou, Yao
(University of Southern California Los Angeles, CA, United States)
Dapkus, P. D.
(University of Southern California Los Angeles, CA, United States)
Garmire, Elsa
(Southern California, University Los Angeles, CA, United States)
Lee, H. C.
(PCO, Inc. Chatsworth, CA, United States)
Date Acquired
August 14, 2013
Publication Date
April 3, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 54
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
89A34688
Distribution Limits
Public
Copyright
Other

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