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Steady-state thermal-solutal diffusion in a float zoneA model for a float zone in a thin vertical sheet is used to study the formation of the zone configuration for both pure and binary systems of Si and GeGa. Equations describing the steady two-dimensional diffusion of solute in the melt and diffusion of heat in the feed material and the product crystal are presented. The material properties, asymptotic solutions for the temperature and concentration profiles, and melting, solidifying, and melt/gas interfacial shapes are determined in the small aspect ratio limit.
Document ID
19890053526
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Young, G. W.
(Akron, University OH, United States)
Chait, A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
May 1, 1989
Publication Information
Publication: Journal of Crystal Growth
Volume: 96
Issue: 1 Ma
ISSN: 0022-0248
Subject Category
Materials Processing
Accession Number
89A40897
Funding Number(s)
CONTRACT_GRANT: NSF DMS-86-04047
Distribution Limits
Public
Copyright
Other

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