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Novel photovoltaic delta-doped GaAs superlattice structureAn asymmetric delta-doped GaAs structure is described which exhibits novel photovoltaic effects and low-intensity nonlinear optics. Of particular interest in this kind of structure is the ability to design the electrooptical and nonlinear optical properties and the material response time over a wide range by appropriate design of the doping profile.
Document ID
19890053814
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Glass, A. M.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Schubert, E. F.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Bonner, C. E.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Wilson, B. A.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena; AT&T Bell Laboratories, Murray Hill NJ, United States)
Cunningham, J. E.
(AT&T Bell Laboratories Holmdel, NJ, United States)
Date Acquired
August 14, 2013
Publication Date
May 29, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 54
ISSN: 0003-6951
Subject Category
Optics
Accession Number
89A41185
Distribution Limits
Public
Copyright
Other

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