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Deep-level transient spectroscopy of Al(x)Ga(1-x)As/GaAs using nondestructive acousto-electric voltage measurementThe amplitude and the transient time constant of the acoustoelectric voltage were measured as a function of temperature to determine the activation energy of deep levels in Al(x)Ga(1-x)As/GaAs grown by molecular-beam epitaxy. In comparison to other methods based on monitoring the capacitance transient, deep-level transient spectroscopy has several advantages. The technique is nondestructive and highly sensitive, and, because of the dependence of the polarity of the acoustoelectric voltage on the carrier type, it yields information about the charge of the transient carriers and the type of deep traps involved in the release or trapping of these carriers.
Document ID
19890055371
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Tabib-Azar, Massood
(Case Western Reserve Univ. Cleveland, OH, United States)
Hajjar, Fares
(Case Western Reserve University Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: 36
ISSN: 0018-9383
Subject Category
Electronics And Electrical Engineering
Accession Number
89A42742
Funding Number(s)
CONTRACT_GRANT: NAG3-816
Distribution Limits
Public
Copyright
Other

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