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High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxyAn attempt is made to improve device efficiencies by depositing indium tin oxide onto epitaxially grown p-InP on p(+)-InP substrates. This leads to a reduction in the device series resistance, high-quality reproducible surfaces, and an improvement in the transport properties of the base layer. Moreover, many of the facets associated with badly characterized bulk liquid encapsulated Czochralski substrates used in previous investigations are removed in this way.
Document ID
19890057147
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Li, X.
(Midwest Research Inst. Golden, CO, United States)
Wanlass, M. W.
(Midwest Research Inst. Golden, CO, United States)
Gessert, T. A.
(Midwest Research Inst. Golden, CO, United States)
Emery, K. A.
(Midwest Research Inst. Golden, CO, United States)
Coutts, T. J.
(Solar Energy Research Institute Golden, CO, United States)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Publication Information
Publication: Journal of Vacuum Science and Technology A
Volume: 7
ISSN: 0734-2101
Subject Category
Electronics And Electrical Engineering
Accession Number
89A44518
Funding Number(s)
CONTRACT_GRANT: NASA ORDER C-30005-K
CONTRACT_GRANT: DE-AC02-83CH-10093
Distribution Limits
Public
Copyright
Other

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