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Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 sourceBoron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.
Document ID
19890063827
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lin, T. L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fathauer, R. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, P. J.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 14, 2013
Publication Date
August 21, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 55
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
89A51198
Distribution Limits
Public
Copyright
Other

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