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Ion-implanted high microwave power indium phosphide transistorsEncapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.
Document ID
19890064773
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Biedenbender, Michael D.
(Cincinnati Univ. OH, United States)
Kapoor, Vik J.
(Cincinnati, University OH, United States)
Messick, Louis J.
(Cincinnati Univ. OH, United States)
Nguyen, Richard
(U.S. Navy, Naval Ocean Systems Center San Diego, CA, United States)
Date Acquired
August 14, 2013
Publication Date
September 1, 1989
Publication Information
Publication: IEEE Transactions on Microwave Theory and Techniques
Volume: 37
ISSN: 0018-9480
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
AD-A224116
Accession Number
89A52144
Distribution Limits
Public
Copyright
Other

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