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Manganese oxide microswitch for electronic memory based on neural networksA solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.
Document ID
19890065800
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Ramesham, R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Daud, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Moopenn, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Thakoor, A. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Khanna, S. K.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 7
ISSN: 0734-211X
Subject Category
Electronics And Electrical Engineering
Accession Number
89A53171
Distribution Limits
Public
Copyright
Other

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