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Calculating Second-Order Effects in MOSFET'sCollection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.
Document ID
19900000003
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Benumof, Reuben
(Caltech)
Zoutendyk, John A.
(Caltech)
Coss, James R.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
January 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17395
Accession Number
90B10003
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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