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Ge/Si Integrated Circuit For Infrared ImagingProposed integrated circuit consists of focal-plane array of metal/germanium Schottky-barrier photodetectors on same chip with silicon-based circuits that processes signals from photodetectors. Made compatible with underlying silicon-based circuitry by growing germanium epitaxially on silicon circuit wafers. Metal deposited in ultrahigh vacuum immediately after growth of germanium. Combination of described techniques results in high-resolution infrared-imaging circuits of superior performance.
Document ID
19900000085
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Fathauer, Robert W.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
March 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 3
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17397
Accession Number
90B10085
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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