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Field-Induced-Gap Infrared DetectorsSemimetals become semiconductors under applied magnetic fields. New detectors require less cooling equipment because they operate at temperatures higher than liquid-helium temperatures required by extrinsic-semiconductor detectors. Magnetic fields for detectors provided by electromagnets based on recently-discovered high-transition-temperature superconducting materials. Detector material has to be semiconductor, in which photon absorbed by exciting electron/hole pair across gap Eg of forbidden energies between valence and conduction energy bands. Magnetic- and compositional-tuning effects combined to obtain two-absorber detector having narrow passband. By variation of applied magnetic field, passband swept through spectrum of interest.
Document ID
19900000086
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Elliott, C. Thomas
(Caltech)
Date Acquired
August 14, 2013
Publication Date
March 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 3
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17526
Accession Number
90B10086
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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