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Superlattice Long-Wavelength Infrared SensorsSuperlattice of LaN and Si detects at wavelengths up to 12 micrometers. If LaN grown epitaxially on silicon, sensitivity of silicon-based photodetectors extended farther into infrared wavelength region with high quantum detection efficiency by use of LaN/Si superlattices. In principle, by appropriate choice of thicknesses of layers, effective band-gap energy of superlattice structure set to any desired value between band gaps of two materials.
Document ID
19900000199
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Fathauer, Robert W. (Caltech)
Date Acquired
August 14, 2013
Publication Date
May 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 5
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17713
Accession Number
90B10199
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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