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GTO/FET Cascode Three-Terminal SwitchNeither external bias nor energy-storage components required. Three-terminal semiconductor switching circuit features high switching speed, extremely high turnoff safe operating area (area in current-vs-voltage plane), moderately low forward ("on"-state) voltage drop, and efficient utilization of silicon in design of components. Includes gate-turn-off thyristor (GTO) and low-voltage (low-on-resistance) field-effect transistor (FET-1) connected in series to form cascode pair. Made of commercially available, discrete components, as hybrid circuit package or as monolithic integrated circuit.
Document ID
19900000313
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Rippel, Wally E.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
July 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 7
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17865
Accession Number
90B10313
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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