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Effects Of Dose Rates On Radiation Damage In CMOS PartsReport describes measurements of effects of ionizing-radiation dose rate on consequent damage to complementary metal oxide/semiconductor (CMOS) electronic devices. Depending on irradiation time and degree of annealing, survivability of devices in outer space, or after explosion of nuclear weapons, enhanced. Annealing involving recovery beyond pre-irradiation conditions (rebound) detrimental. Damage more severe at lower dose rates.
Document ID
19900000443
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Goben, Charles A.
(Caltech)
Coss, James R.
(Caltech)
Price, William E.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
September 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 9
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17344
Accession Number
90B10443
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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